光电阴极
材料科学
化学工程
钴
光电化学
冶金
兴奋剂
催化作用
蚀刻(微加工)
光电子学
分解水
光电流
硅
黑硅
电极
化学
纳米技术
光催化
电化学
物理化学
电子
工程类
物理
量子力学
生物化学
图层(电子)
作者
Wei Cai,Haiying Xiong,Xiaodong Su,Hao Zhou,Mingrong Shen,Liang Fang
摘要
Black silicon (Si) photoelectrodes are promising for improving the performance of photoelectrochemical (PEC) water splitting. Here, we report the fabrication of p-black Si and n+p-black Si photocathodes via a controllable copper-assisted catalyzed etching method. The etching process affects only the topmost less than 200 nm of Si and is independent of the surface doping. The synergistic effects of the excellent light harvesting of the black Si and the improved charge transfer properties of the p-n junction boost the production and utilization of photogenerated carriers. The mean reflectance of the pristine Si samples is about 10% from 400 to 950 nm, while that of the black Si samples is reduced as low as 5%. In addition, the PEC properties of the n+p-black Si photocathode can be further enhanced by depositing a cobalt (Co) layer. Compared with the p-Si sample, the onset potential of the Co/n+p-black Si photocathode is positively shifted by 560 mV to 0.33 V vs. reversible hydrogen electrode and the saturation photocurrent density is increased from 22.7 to 32.6 mA/cm2. The design of the Co/n+p-black Si photocathode offers an efficient strategy for preparing PEC solar energy conversion devices.
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