横杆开关
神经形态工程学
CMOS芯片
记忆电阻器
计算机科学
位图
记忆晶体管
电子工程
晶体管
电阻随机存取存储器
非易失性存储器
计算机硬件
电气工程
工程类
电压
人工神经网络
机器学习
计算机视觉
作者
Kuk-Hwan Kim,Siddharth Gaba,Dana Wheeler,Jose Cruz-Albrecht,T. Hussain,Narayan Srinivasa,Wei Lü
出处
期刊:Nano Letters
[American Chemical Society]
日期:2011-12-09
卷期号:12 (1): 389-395
被引量:848
摘要
Crossbar arrays based on two-terminal resistive switches have been proposed as a leading candidate for future memory and logic applications. Here we demonstrate a high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the memristor element. The hybrid crossbar/CMOS system can reliably store complex binary and multilevel 1600 pixel bitmap images using a new programming scheme.
科研通智能强力驱动
Strongly Powered by AbleSci AI