光致发光
拉曼光谱
化学气相沉积
激子
光谱学
材料科学
极化(电化学)
声子
激发
Crystal(编程语言)
分析化学(期刊)
分子物理学
光电子学
光学
化学
凝聚态物理
物理
量子力学
色谱法
物理化学
计算机科学
程序设计语言
作者
Gerd Plechinger,John Mann,Edwin Preciado,David Barroso,Ariana E. Nguyen,Jonathan Eroms,Christian Schüller,Ludwig Bartels,Tobias Korn
标识
DOI:10.1088/0268-1242/29/6/064008
摘要
MoS2 is a highly interesting material, which exhibits a crossover from an indirect band gap in the bulk crystal to a direct gap for single layers. Here, we perform a direct comparison between large-area MoS2 films grown by chemical vapor deposition (CVD) and MoS2 flakes prepared by mechanical exfoliation from mineral bulk crystal. Raman spectroscopy measurements show differences between the in-plane and out-of-plane phonon mode positions in CVD-grown and exfoliated MoS2. Photoluminescence (PL) mapping reveals large regions in the CVD-grown films that emit strong PL at room-temperature, and low-temperature PL scans demonstrate a large spectral shift of the A exciton emission as a function of position. Polarization-resolved PL measurements under near-resonant excitation conditions show a strong circular polarization of the PL, corresponding to a valley polarization.
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