共发射极
有机发光二极管
光电子学
材料科学
光致发光
量子产额
量子效率
偶极子
纳米技术
光学
物理
荧光
量子力学
图层(电子)
作者
Guomeng Li,Mingxu Du,Tianjiao Fan,Xiaofeng Luo,Lian Duan,Yuewei Zhang
标识
DOI:10.1016/j.mattod.2024.01.003
摘要
Narrowband emitters offer significant advantages in the fabrication of next-generation deep-blue organic light-emitting diodes (OLEDs) due to their wide color gamut, high stability, and high efficiency. It is a pressing challenge to increase the light outcoupling efficiency to further boost device performance, even though 100% internal quantum efficiency is already achievable through rational molecular design. Here, we strategically propose a novel asymmetric structure design strategy aimed at simultaneously optimizing the horizontal emitting dipole orientation and aggregation state properties of the deep-blue multi-resonance (MR) emitters. This proof-of-concept emitter A-BN is capable of displaying ultrapure deep-blue emission with a peak of ∼461 nm, a small full-width-at-half-maximum of ∼25 nm, a CIEy coordinate of ∼0.08, a high horizontal dipole ratio of ∼90 %, and a near-unity photoluminescence quantum yield of ∼98 % in the practical mass-production concentration range (1–3 wt%). The corresponding non-sensitized device achieves a maximum external quantum efficiency of 41.5% without any external light extraction techniques, representing state-of-the-art performance for deep-blue OLEDs. These findings will help drive the development of highly efficient and stable narrowband deep-blue emitters and lead to a revolution in OLED technology.
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