德拉姆
计算机科学
对偶(语法数字)
带宽(计算)
电子工程
多路复用
计算机体系结构
计算机硬件
工程类
电信
文学类
艺术
作者
Jonghoon J. Kim,Jinseong Yun,K. Lee,Rakjoo Sung,Jihye Yang,Seiseung Yoon,Young‐Ho Lee,KyoungSun Kim,Jeonghyeon Cho,Hoyoung Song
标识
DOI:10.1109/epeps58208.2023.10314933
摘要
Continuous increase in the demand for high-speed and large-capacity memory modules is being intensified by the development of numerous memory-intensive applications. In order to fulfill these demands, Multiplexed Rank Dual In-line Memory Module (MRDIMM) has been newly proposed in JEDEC, with its main objective being doubling of the data bandwidth without having to overcome the physical limitations in DRAM scaling. In this paper, we introduce the design concept of 2U MRDIMM that can fulfill both speed and capacity needs of various memory-intensive applications. The proposed concepts have been verified through a series of signal and power simulations, as well as Proof of Concept (PoC)-based measurements.
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