钝化
晶体硅
薄脆饼
氮化硅
材料科学
多晶硅
硅
制作
太阳能电池
单晶硅
光电子学
载流子寿命
工程物理
纳米技术
工程类
图层(电子)
薄膜晶体管
病理
替代医学
医学
标识
DOI:10.1002/1099-159x(200009/10)8:5<473::aid-pip337>3.0.co;2-d
摘要
In the 1980s, advances in the passivation of both cell surfaces led to the first crystalline silicon solar cells with conversion efficiencies above 20%. With today's industry trend towards thinner wafers and higher cell efficiency, the passivation of the front and rear surfaces is now also becoming vitally important for commercial silicon cells. This paper presents a review of the surface passivation methods used since the 1970s, both on laboratory-type as well as industrial cells. Given the trend towards lower-cost (but also lower-quality) Si materials such as block-cast multicrystalline Si, ribbon Si or thin-film polycrystalline Si, the most promising surface passivation methods identified to date are the fabrication of a p–n junction and the subsequent passivation of the resulting silicon surface with plasma silicon nitride as this material, besides reducing surface recombination and reflection losses, additionally provides a very efficient passivation of bulk defects. Copyright © 2000 John Wiley & Sons, Ltd.
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