缩放比例
CMOS芯片
块(置换群论)
逻辑门
计算机科学
电子工程
材料科学
计算机体系结构
电气工程
工程类
几何学
数学
作者
Julien Ryckaert,M. H. Na,Pieter Weckx,Doyoung Jang,P. Schuddinck,Bilal Chehab,S. Patli,Santonu Sarkar,O. Zografos,Rogier Baert,Diederik Verkest
标识
DOI:10.1109/iedm19573.2019.8993631
摘要
Scaling beyond 5nm will bring us into the post FinFET era where new device architectures optimized for CMOS logic scaling will be required. In this paper, the evolution to vertically stacked Nanosheets, Forksheet, and finally CFET are reviewed in conjunction with buried power rails and wrap around contact. Performance and area impact of these architectures are evaluated both at standard cell as well as block level to provide realistic PPA estimate for true technology scaling.
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