电介质
凝聚态物理
晶界
材料科学
陶瓷
放松(心理学)
兴奋剂
物理
微观结构
复合材料
心理学
光电子学
社会心理学
作者
T. Liu,Xiaofei Wang,Congcong Li,Bo Shen,Mingyan Yao,Xinyang Pei,Yahui Yang,Yanglei Ou,Zhaofei Zhu,Liben Li
标识
DOI:10.1142/s0217984921500469
摘要
[Formula: see text] (SLTO) ceramics ([Formula: see text] = 0.05, 0.10, 0.15) were prepared with giant dielectric constant by the traditional solid-state method at 1350[Formula: see text]C. The temperature dependence of the dielectric constant was obtained at the temperature ranging from 29[Formula: see text]C to 500[Formula: see text]C and the frequency ranging from 2 kHz to 2 MHz. Two sets of relaxation peaks appear in the low temperature (region I) and the high temperature (region II), respectively. For region I, we conclude that the relaxation behavior is related to the oxygen vacancy migration. For region II, the two relaxation processes are caused by grain boundary for high frequency and Sr or Ti defects at grain interior for low frequency. With the doping amount reaching 0.15, the relaxation peaks disappear and become a common phase transition because of the aggravation of lattice distortion. These possible physical mechanisms of two sets of relaxation peaks are briefly discussed.
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