电致发光
钙钛矿(结构)
材料科学
发光二极管
光电子学
量子效率
纳米晶材料
二极管
聚合物
纳米晶
图层(电子)
纳米技术
化学工程
化学
结晶学
工程类
作者
Guangru Li,Zhi‐Kuang Tan,Dawei Di,May Ling Lai,Lang Jiang,Jonathan Hua-Wei Lim,Richard H. Friend,Neil C. Greenham
出处
期刊:Nano Letters
[American Chemical Society]
日期:2015-03-04
卷期号:15 (4): 2640-2644
被引量:603
标识
DOI:10.1021/acs.nanolett.5b00235
摘要
Electroluminescence in light-emitting devices relies on the encounter and radiative recombination of electrons and holes in the emissive layer. In organometal halide perovskite light-emitting diodes, poor film formation creates electrical shunting paths, where injected charge carriers bypass the perovskite emitter, leading to a loss in electroluminescence yield. Here, we report a solution-processing method to block electrical shunts and thereby enhance electroluminescence quantum efficiency in perovskite devices. In this method, a blend of perovskite and a polyimide precursor dielectric (PIP) is solution-deposited to form perovskite nanocrystals in a thin-film matrix of PIP. The PIP forms a pinhole-free charge-blocking layer, while still allowing the embedded perovskite crystals to form electrical contact with the electron- and hole-injection layers. This modified structure reduces nonradiative current losses and improves quantum efficiency by 2 orders of magnitude, giving an external quantum efficiency of 1.2%. This simple technique provides an alternative route to circumvent film formation problems in perovskite optoelectronics and offers the possibility of flexible and high-performance light-emitting displays.
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