材料科学
锑
光电子学
光束发散
激光器
二极管
半导体激光器理论
锑化铟
光学
亮度
连续波
物理
光束直径
激光束
作者
Jianmei Shi,Chengao Yang,T. M. Wang,Yihang Chen,Hongguang Yu,Yu Zhang,Donghai Wu,Yingqiang Xu,Haiqiao Ni,Zhichuan Niu
摘要
Antimonide semiconductor laser diodes with high brightness are ideal light sources for a variety of applications. However, the traditional structure of broad-area (BA) lasers with high-power output is normally accompanied by a multi-lobed far field profile and large lateral divergence. In this paper, we put up an on-chip microstructure for mode filtering. The excellent mode control capability is doubly confirmed by optical field simulations and complete device measurements. The optimized device shows an enhanced continuous-wave output power in exceeding of 1.3 W at room temperature, along with a reduced threshold current and increased peak power conversion efficiency. Moreover, it exhibits an ultra-stable lateral far field with a 45.6% reduction in divergence and a notable 75.5% improvement in current dependence compared with conventional BA diode lasers. The minimum divergence is as low as 5.64° for full width at half maximum definition.
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