范德瓦尔斯力
材料科学
纳米技术
物理
量子力学
分子
作者
Zhen Mei,Xuanzhang Li,Liang Liang,Yuheng Li,Zhongyuan Zhao,Zuoping Zhou,Qunqing Li,Shoushan Fan,Jiaping Wang,Wei Yang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-10-04
标识
DOI:10.1021/acsnano.4c09615
摘要
Two-dimensional (2D) materials enable vertical field effect transistors (VFETs), which provide an alternative path for scaling down the channels of transistors. The challenge is the short channel effect when the thickness of the 2D channel decreases to ∼10 nm. Here, we show that a VFET with an ultrashort channel can be accomplished by employing a semimetal carbon nanotube (CNT) as a 1D van der Waals (vdW) contact. The CNT-VFETs with 5-10 nm MoS
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