荧光粉
半最大全宽
发光二极管
光致发光
红外线的
热稳定性
二极管
量子效率
材料科学
近红外光谱
发光
光电子学
分析化学(期刊)
物理
光学
化学
有机化学
色谱法
作者
Jin Xiang Lim,Hongcheng Wang,Xiaojiao Kang,Wei Lü,Chin Seong Lim,Zhennan Zhu,Qiwen Pan,Novita Sakundarini,Yea Dat Chuah
标识
DOI:10.1002/lpor.202400750
摘要
Abstract Near‐infrared (NIR) phosphors are a vital component of phosphor‐converted light‐emitting diodes (pc‐LEDs), with simultaneous high quantum efficiency and thermal stability being essential attributes for optimal performance. In this paper, a novel ZnAlB (1‐ x ) Ga x O 4 :0.05Cr 3+ system is designed by gradually substituting B with Ga. Surprisingly, a significant enhancement in photoluminescence performance is observed, reaching peak efficiency at x = 1. Further development led to a series of ZnAlGaO 4 : y Cr 3+ (ZAGO: y Cr 3+ ) phosphors, exhibiting variable full width at half maximum (FWHM) ranging from 32 to 163 nm with increasing Cr 3+ content, attributed to energy transfer between two Cr 3+ emission centers. Among these, ZAGO:0.05Cr 3+ emerges as the optimal phosphor, boasting a high internal/external quantum efficiency of 80%/34% with a FWHM of 80 nm. Notably, this phosphor demonstrates anti‐thermal quenching behavior (125.53% @ 423 K), with its exceptional thermal stability elucidated through the defect level model. The fabricated NIR pc‐LEDs featuring ZAGO:Cr 3+ phosphors show great prospect in multifunctional applications in plant cultivation, night vision, non‐destructive analysis and veins imaging.
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