Enhancing back interfacial contact by in-situ prepared MoO3 thin layer for Cu2ZnSnSxSe4-x solar cells

In-situ prepared MoO3 thin layer has been introduced to suppress the formation of too thick Mo(S,Se)2 layer in Cu2ZnSnS x Se4– x (CZTSSe) solar cells. This MoO3 layer effectively improves the back interfacial contact between CZTSSe absorber layer and Mo substrate without poisoning the carrier transport. Up to 10.58% power conversion efficiency has been achieved.