Substrate Technologies for Silicon‐Integrated RF and mm‐Wave Passive Devices

Chapter 13 Substrate Technologies for Silicon-Integrated RF and mm-Wave Passive Devices Androula G. Nassiopoulou, Androula G. NassiopoulouSearch for more papers by this authorPanagiotis Sarafis, Panagiotis SarafisSearch for more papers by this authorJean-Pierre Raskin, Jean-Pierre RaskinSearch for more papers by this authorHenza Issa, Henza IssaSearch for more papers by this authorPhillippe Ferrari, Phillippe FerrariSearch for more papers by this author Androula G. Nassiopoulou, Androula G. NassiopoulouSearch for more papers by this authorPanagiotis Sarafis, Panagiotis SarafisSearch for more papers by this authorJean-Pierre Raskin, Jean-Pierre RaskinSearch for more papers by this authorHenza Issa, Henza IssaSearch for more papers by this authorPhillippe Ferrari, Phillippe FerrariSearch for more papers by this author Book Editor(s):Francis Balestra, Francis BalestraSearch for more papers by this author First published: 07 May 2014 https://doi.org/10.1002/9781118984772.ch13Citations: 1 AboutPDFPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShareShare a linkShare onFacebookTwitterLinked InRedditWechat Summary This chapter mainly focuses on two different silicon (Si)-based substrates: high-resistivity Si substrate, including HR-Si, high-resistivity silicon-on-insulator (HR-SOI) and trap-rich HR-Si, and porous Si substrate. A full comparison between the two is presented by integrating similar coplanar waveguide transmission lines (CPW TLines) on both of them and measuring their properties under similar conditions. A thick porous Si layer locally formed on the Si wafer can provide an effective RF shielding from the Si substrate for the integration of RF passive devices. The chapter discusses the fabrication and general properties of porous Si. The characteristics of different RF devices, including CPW TLines, inductors and antennas on porous Si are analyzed, demonstrating the effectiveness of porous Si as a local low loss RF substrate on Si. Citing Literature Beyond-CMOS Nanodevices 1 RelatedInformation