期刊:International Symposium on Circuits and Systems日期:1999-05-30卷期号:6: 282-285被引量:8
标识
DOI:10.1109/iscas.1999.780150
摘要
A SPICE model for the microwave and RF PIN switching diode is presented. The model simulates the important I-region charge storage phenomenon and its effect on the PIN diode impedance-frequency characteristic. The SPICE model is described and validated by comparisons with both analytical and measured results.