辐照
硬化(计算)
材料科学
MOSFET
功率MOSFET
光电子学
晶体管
辐射硬化
电磁屏蔽
工程物理
核工程
电气工程
纳米技术
工程类
物理
复合材料
核物理学
电压
图层(电子)
作者
Zhaohuan Tang,Xingji Li,Kaizhou Tan,Chaoming Liu,Xian Chen,Xinghua Fu
标识
DOI:10.1109/icreed.2018.8905059
摘要
This paper analyses the failure mechanism and striking process of heavy ions irradiated vertical double diffusion power metal-oxide-semiconductor field effect transistor(VDMOS), concludes three irradiation hardening technologies, shielding technology, recombination technology and enhancement technology, summarizes the development of single-event irradiation hardening technologies for power VDMOS in domestic and international.These technologies could provide reference for the researchers who are engaging in the single-event irradiation hardening technology of semiconductor device.
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