锑
带隙
材料科学
太阳能电池
硒化物
沉积(地质)
蒸发
光电子学
光伏系统
冶金
物理
热力学
电气工程
工程类
古生物学
硒
生物
沉积物
作者
Yue Lu,Kanghua Li,Xiaosheng Yang,Shuaicheng Lu,Sen Li,Jiajia Zheng,Liuchong Fu,Chao Chen,Jiang Tang
标识
DOI:10.1021/acsami.1c10758
摘要
Antimony chalcogenides are widely studied as a light-absorbing material due to their merits of low toxicity, efficient cost, and excellent photovoltaic properties. However, the band gaps of antimony selenide (approximately 1.1 eV) and antimony sulfide (approximately 1.7 eV) both deviate from the optimal detailed balance band gap (∼1.3 eV) for terrestrial single-junction solar cells. Notably, the band gap of Sb2(S, Se)3 can be tunable in the range from 1.1 to 1.7 eV, which can cover the detailed balance band gap. In this work, the vapor transport deposition method with two independent evaporation sources is used to deposit Sb2(S, Se)3 thin films. By carefully optimizing the evaporation temperature and the start evaporation time of the Sb2Se3 and Sb2S3 sources, a suitable band gap of 1.33 eV is obtained. Finally, on the basis of the optimal Sb2(S, Se)3 films, Sb2(S, Se)3 solar cells without a hole transport layer achieved an efficiency of 7.03%.
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