High Performance Ternary Organic Phototransistors with Photoresponse up to 2600 nm at Room Temperature

材料科学 光探测 光电子学 光电二极管 光电探测器 响应度 有机半导体 三元运算 紫外线 可见光谱 比探测率 并五苯 晶体管 红外线的 带隙 纳米技术 光学 薄膜晶体管 物理 电压 程序设计语言 量子力学 计算机科学 图层(电子)
作者
Ben Yang,Yan Wang,Li Li,Junyao Zhang,Jianlu Wang,Hanxue Jiao,Dandan Hao,Pu Guo,Sheng Zeng,Zhekun Hua,Jia Huang
出处
期刊:Advanced Functional Materials [Wiley]
卷期号:31 (40) 被引量:36
标识
DOI:10.1002/adfm.202103787
摘要

Abstract Infrared (IR) photodetection is important for light communications, military, agriculture, and related fields. Organic transistors are investigated as photodetectors. However, due to their large band gap, most organic transistors can only respond to ultraviolet and visible light. Here high performance IR phototransistors with ternary semiconductors of organic donor/acceptor complex and semiconducting single‐walled carbon nanotubes (SWCNTs), without deep cooling requirements are developed. Due to both the ultralow intermolecular electronic transition energy of the complex and charge transport properties of SWCNTs, the phototransistor realizes broadband photodetection with photoresponse up to 2600 nm. Moreover, it exhibits outstanding performance under 2000 nm light with photoresponsivity of 2.75 × 10 6 A W −1 , detectivity of 3.12 × 10 14 Jones, external quantum efficiency over 10 8 %, and high I photo / I dark ratio of 6.8 × 10 5 . The device exhibits decent photoresponse to IR light even under ultra‐weak light intensity of 100 nW cm −2 . The response of the phototransistor to blackbody irradiation is demonstrated, which is rarely reported for organic phototransistors. Interestingly, under visible light, the device can also be employed as synaptic devices, and important basic functions are realized. This strategy provides a new guide for developing high performance IR optoelectronics based on organic transistors.
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