CMOS芯片
电气工程
物理
电压
电容器
电压基准
分析化学(期刊)
光电子学
化学
工程类
色谱法
作者
Ka Nang Leung,Philip K. T. Mok
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2003-01-01
卷期号:38 (1): 146-150
被引量:188
标识
DOI:10.1109/jssc.2002.806265
摘要
A CMOS voltage reference, which is based on the weighted difference of the gate-source voltages of an NMOST and a PMOST operating in saturation region, is presented. The voltage reference is designed for CMOS low-dropout linear regulators and has been implemented in a standard 0.6-μm CMOS technology (V/sub thn//spl ap/|V/sub thp/|/spl ap/0.9 V at 0°C). The occupied chip area is 0.055 mm 2 . The minimum supply voltage is 1.4 V, and the maximum supply current is 9.7 μA. A typical mean uncalibrated temperature coefficient of 36.9 ppm/°C is achieved, and the typical mean line regulation is ±0.083%/V. The power-supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz are -47 and -20 dB, respectively. Moreover, the measured noise density with a 100-nF filtering capacitor at 100 Hz is 152 nV//spl radic/(Hz) and that at 100 kHz is 1.6 nV//spl radic/(Hz).
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