材料科学
掺杂剂
非晶硅
拉曼光谱
兴奋剂
硅
无定形固体
拉曼散射
Atom(片上系统)
分析化学(期刊)
微观结构
光电子学
光学
晶体硅
结晶学
复合材料
化学
嵌入式系统
物理
色谱法
计算机科学
作者
Switi Dattatraya Kshirsagar,Rajiv O. Dusane,V. G. Bhide
出处
期刊:Physical review
日期:1989-10-01
卷期号:40 (11): 8026-8029
被引量:28
标识
DOI:10.1103/physrevb.40.8026
摘要
Raman scattering measurements on thin films of undoped and B- and P-doped hydrogenated amorphous silicon (a-Si:H) alloys have been reported. The doped samples indicate considerable concentration-dependent changes in the longitudinal vibrations as well as in the position and full width at half-maximum of the optical band relative to the undoped samples. These dopant-atom-induced changes in Raman spectra are attributed to the modification of hydrogen microstructure and consequently to the degraded short-range order. These changes are proposed to degrade the doping efficiency in a-Si:H alloys.
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