An InGaN/GaN MQWs Solar Cell Improved By a Surficial GaN Nanostructure as Light Traps

The InGaN/GaN multi-quantum-wells (MQWs) solar cells employing the surficial GaN nanostructure as light traps were investigated. The performance of the InGaN/GaN MQWs solar cell with nano holes surface shows an obvious advantage over that with nano poles, much less than the planar one. From the measurements of EQE and photoluminescence spectra, the enhancement of photoelectric response contributes to the device performances. Because the effective light absorption is increased, the conversion efficiency significantly improves from 1.02% (planar surface) up to 2.235% (nano holes surface). Although the performance is still low, it is exactly an effective method to enhance the conversion efficiency via introducing nanostructures on the surface of the InGaN/GaN MQWs cells.