The effects of decomposition of CpZr(NMe2)3 on atomic layer deposition for high-k ZrO2 thin films

In this study, the thermal stability of cyclopentadienyl tris(dimethylamino)zirconium (CpZr(NMe2)3), a representative precursor for the deposition of ZrO2 films, was evaluated after exposure to thermal stress. As a result, we predicted that dimethylamine, and trimethylamine may be generated when CpZr(NMe2)3 was heated. These impurities affect the growth of film and the properties of the film. In particular, by changing the vapor pressure of CpZr(NMe2)3, thin films with different characteristics are formed under the same process conditions, and consequently, the reliability of the device was also reduced. Therefore, this study demonstrates that the decomposition of precursors must be studied to develop new precursors and highly reliable thin films and devices.