阳极
氧化铟锡
材料科学
铟
电极
二极管
光电子学
电压
锡
发光二极管
氧化物
化学
冶金
纳米技术
电气工程
图层(电子)
物理化学
工程类
作者
Kohei Nishiyama,Toshihiro Kugimiya,Hiroyuki Okuno,Moriyoshi Kanamaru
标识
DOI:10.7567/jjap.56.035802
摘要
We have developed indium–tin oxide (ITO)/Al–Ni–Cu–La anode electrodes for cost-effective large top-emission organic light-emitting diode (OLED) displays. By combining alkaline cleaning with thermal annealing, the driving voltage of the OLED devices containing Al–Ni–Cu–La thin films was effectively reduced, becoming comparable to that for conventional Ag alloy thin films. Cross-sectional transmission electron microscopy (XTEM) observation revealed that the grains in the Al matrix and the precipitates on the Al–Ni–Cu–La surface were small, resulting in a low driving voltage and a high optical reflectivity. The Al–Ni–Cu–La thin films overcome the oxidation issues that cause an increase in contact resistance due to the formation of AlO x between the Al alloy and the ITO thin films, and could replace conventional anode electrodes having an ITO/Ag/ITO structure.
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