金属有机气相外延
化学气相沉积
锑
外延
第2组金属有机化学
半导体
沉积(地质)
半导体材料
材料科学
光电子学
化学
纳米技术
分子
有机化学
地质学
古生物学
图层(电子)
沉积物
摘要
The metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III-V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD-grown materials are used as examples of the capabilities of the growth technique.
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