Construction of perovskite solar cells and X-ray detectors using the indium selenide-carbon nanotube hybrids tuned hole transporting layer

Recently, two-dimensional (2D) materials have fascinated consideration in optoelectronic outcomes because of their remarkable electronic configurations. Herein, ultrasonic reduction process was employed to prepare the indium selenide@carbon nanotube (In2Se3@CNT) hybrid with different amounts (10, 20 and 30%) of CNT particles. The morphological and structural properties authorized the formation of In2Se3 and their CNT hybrid. Further, spin casting was engaged to form the In2Se3@CNT/PEDOT:PSS hybrid film as an anode interfacial layer for the perovskite based solar cell and X-ray detecting devices. The consequences showed the maximum power conversion efficiency (PCE) of 13.36% by introducing the In2Se3@CNT (20%)/PEDOT:PSS composite hole transport layer into the solar cell. On the other hand, the fabricated X-ray photodetector with In2Se3@CNT (20%)/PEDOT:PSS hole interfacing layer attained a superior sensitivity of 4.48 mA/Gy·cm2. The improved device function credited to the increase of conductivity of In2Se3@CNT (20%)/PEDOT:PSS interfacing with perovskite thereby increased the collection efficiency, charge extraction and hole mobilities of the device.