Highly‐Bendable MoS2/SnS Flexible Photodetector with Broadband Infrared Response

Abstract Flexible electronics is one of the hotspots of interdisciplinary research and can promote disruptive technology for post‐Moore applications in the field of biomedical, electronic skin, wearable devices, etc. 2D materials have triggered great interest in flexible electronic devices since they have tunable bandgaps, excellent mechanical flexibility, good chemical stability, and outstanding optical properties. Their reducible atomic thickness greatly facilitates the design and construct for bending, crimping, and folding, whereas it comes at the expense of superior optoelectronic properties. Herein, a highly‐bendable flexible photodetector based on MoS 2 /SnS amorphous blended film is fabricated with a broadband response from 473 to 1550 nm. The responsivity at 808 nm is 1128 times larger than that of intrinsic MoS 2 photodetector accompanied by a four‐fold acceleration in response time. It can bear a small bending radius as low as 3 mm for over 2000 bending–flatting cycles without a drastic performance decay. Moreover, it shows an ultrastrong stability in photoresponse exposed to air for 200 days. This work provides a promising candidate for high performance flexible photodetectors and opens up the prospect of 2D bulk blended materials in a facile all‐in‐one strategy for multifunctional flexible optoelectronics devices and systems.