Ultra High Luminous Efficiency p-Type Surface Defect Structure GaN LED

In this paper, we propose a double-layer SiO 2 photonic crystal LED with a linear defect structure in the [Formula: see text]-GaN layer, the purpose is to solve the problem of low light extraction efficiency caused by diffusion scattering effect. We used FDTD modeling to analyze the light-emitting characteristics of GaN LED, after optimizing the structural parameters of two-dimensional photonic crystals, the light extraction efficiency is improved from 19.4% to 35.2%, the light extraction efficiency is increased by 1.8 times, meanwhile the light output power is also increased by 1.86 times. The introduction of the defect structure does not affect the [Formula: see text]–[Formula: see text] characteristics of the LED, and the output power of the LED is increased by 11% under the current of 300[Formula: see text]mA.