铁电性
材料科学
薄膜
缓冲器(光纤)
极限抗拉强度
图层(电子)
压电
复合材料
光电子学
纳米技术
电介质
电气工程
工程类
作者
Tomohide Morikawa,Masanori Kodera,Takao Shimizu,Keisuke Ishihama,Yoshitaka Ehara,Osami Sakata,Hiroshi Funakubo
摘要
Thin films of Sr(Zr,Ti)O3 were investigated as buffer layers to induce tensile strain in ferroelectric thin films such as PbTiO3 and Pb(Zr,Ti)O3 to control the domain structure. By tuning the composition of Sr(Zr,Ti)O3, (100)-oriented PbTiO3 and Pb(Zr,Ti)O3 films were obtained, revealing that tensile strain was introduced into the thin films by the lattice of the buffer layer. We propose a methodology for the successive control of tensile stress, which is useful for understanding and controlling the domain structures of ferroelectric films that result in the ferroelectric and piezoelectric properties of ferroelectric thin films.
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