材料科学
载流子
可见光谱
光电子学
兴奋剂
掺杂剂
氧化物
纳米颗粒
异质结
带隙
纳米技术
光化学
化学
冶金
作者
Seyeon Park,Minhyun Kim,Yunsung Lim,DongHwan Oh,Jaewan Ahn,Chungseong Park,Sungyoon Woo,WooChul Jung,Jihan Kim,Il‐Doo Kim
标识
DOI:10.1002/adma.202313731
摘要
Light-activated chemiresistors offer a powerful approach to achieving lower-temperature gas sensing with unprecedented sensitivities. However, an incomplete understanding of how photoexcited charge carriers enhance sensitivity obstructs the rational design of high-performance sensors, impeding the practical utilization under commonly accessible light sources instead of ultraviolet or higher-energy sources. Here, a rational approach is presented to modulate the electronic properties of the parent metal oxide phase, exemplified by this model system of Bi-doped In
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