钙钛矿(结构)
结晶
钝化
成核
发光二极管
材料科学
光电子学
晶粒生长
锡
化学工程
粒度
发光
纳米技术
化学
冶金
有机化学
图层(电子)
工程类
作者
Jung‐Min Heo,Himchan Cho,Seong‐Chul Lee,Minho Park,Joo Sung Kim,Hobeom Kim,Jinwoo Park,Young‐Hoon Kim,Hyung Joong Yun,Eojin Yoon,Dong‐Hyeok Kim,Soyeong Ahn,Sung‐Joo Kwon,Chan‐Yul Park,Tae‐Woo Lee
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2022-08-03
卷期号:7 (8): 2807-2815
被引量:36
标识
DOI:10.1021/acsenergylett.2c01010
摘要
Tin-based perovskites have emerged as lead-free alternatives, but their application in perovskite light-emitting diodes (PeLEDs) has been limited due to the low chemical stability and inhomogeneity of the inorganic CsSnBr3 films using solution processing. Here, we demonstrate bright (∼160 cd m–2) CsSnBr3 PeLEDs made by introducing co-additives consisting of SnF2 and a grain-growth inhibitor (1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene). The use of co-additives increased the number of nucleation sites during the crystallization process of CsSnBr3, and consequently yielded uniform CsSnBr3 films with decreased grain size and improved defect passivation. The crystallization-controlled CsSnBr3 PeLEDs had a maximum luminance of ∼160 cd m–2, i.e., ∼7500 times brighter than than that of the control devices (without additive, 0.02 cd m–2), and a long device lifetime of ∼30 h at 58 cd m–2. Our work suggests that control of the crystallization of CsSnBr3 during film formation is an important requirement to increase the luminescence efficiency and stability of tin-based PeLEDs.
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