基面
平面(几何)
材料科学
分布(数学)
结晶学
凝聚态物理
学位(音乐)
位错
单晶
几何学
化学
复合材料
物理
数学
数学分析
声学
作者
Sheng'ou Lu,Binjie Xu,Yazhe Wang,Jie Chen,Wei Hang,Rong Wang,Julong Yuan,Xiaodong Pi,Deren Yang,Xue‐Feng Han
出处
期刊:CrystEngComm
[The Royal Society of Chemistry]
日期:2024-01-01
卷期号:26 (16): 2143-2154
被引量:1
摘要
The basal plane slip model in 4H-SiC was developed to investigate the effects of off-axis angles on total resolved shear stress. The results showed that the TRSS changed from 6-fold to 4-fold symmetry with the increasing off-axis angles.
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