探测器
肖特基二极管
光电子学
暗电流
钻石
二极管
材料科学
光电探测器
光学
辐照
信号(编程语言)
整改
物理
程序设计语言
计算机科学
复合材料
功率(物理)
量子力学
核物理学
作者
Benjian Liu,Kang Liu,Sen Zhang,V. G. Ralchenko,Xiaohui Zhang,Jingjing Xue,Dongyue Wen,Pengfei Qiao,Junhong Zhao,Bing Dai,Lei Yang,Jiecai Han,Jiaqi Zhu
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2022-12-02
卷期号:4 (12): 5996-6003
被引量:6
标识
DOI:10.1021/acsaelm.2c01164
摘要
Self-powered solar-blind UV detectors were fabricated using high-quality Ru/diamond Schottky diodes. Photocurrents of 1 nA and 1.3 nA were obtained for detector Semi and Mesh under the condition of zero bias and 220 nm UV light irradiation, while the dark currents of these two detectors were 0.53 pA and 0.007 pA at 0 V, respectively. Photosensitive areas of detector Semi and Mesh were 1 mm2 and 0.74 mm2, respectively. Rectification ratios as high as 1.5 × 107 and 5.7 × 108 at ±5 V for Semi and Mesh were obtained, showing good rectifying characteristics for the vertical Schottky diodes. Responsivities at 0 V of Semi and Mesh were 10.3 mA/W and 16.2 mA/W, respectively. High detectivities of 3.8 × 1012 Jones and 5.2 × 1013 Jones for detector Semi and Mesh indicate excellent self-powered detection performance. To make a comprehensive comparison of the performance of diamond solar-blind UV detectors, a log(Iph) versus log(Idark) graph was proposed, and the detector in this work showed an ultrahigh SNR of 2 × 105. A high linear dynamic range of 105.9 dB was achieved for the self-powered detector Mesh.
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