探测器
焦平面阵列
基点
光电子学
空格(标点符号)
材料科学
光学
平面(几何)
考试(生物学)
物理
计算机科学
地质学
数学
几何学
操作系统
古生物学
作者
Xue Li,Zhangcheng Huang,Haimei Gong,Xianliang Zhu,Haiyan Zhang
摘要
The short-wavelength infrared (SWIR) InGaAs focal plane array (FPA) detector consists of infrared detector chip, readout integrated circuit (ROIC), and flip-chip bonding interconnection by Indium bump. In order to satisfy space application requirements for failure rates or Mean Time to Failure (MTTF), which can only be demonstrated with the large number of detectors manufactured, the single pixel in InGaAs FPAs was chosen as the research object in this paper. The constant-stress accelerated life tests were carried out at 70°C,80°C,90°C and100°C. The failed pixels increased gradually during more than 14000 hours at each elevated temperatures. From the random failure data the activation energy was estimated to be 0.46eV, and the average lifetime of a single pixel in InGaAs FPAs was estimated to be longer than 1E+7h at the practical operating temperature (5°C).
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