Halide Welding for Silver Nanowire Network Electrode

材料科学 卤化物 电极 纳米线 焊接 卤化银 纳米技术 无机化学 冶金 图层(电子) 化学 物理化学
作者
Hyungseok Kang,Yeon‐Tae Kim,Siuk Cheon,Gi‐Ra Yi,Jeong Ho Cho
出处
期刊:ACS Applied Materials & Interfaces [American Chemical Society]
卷期号:9 (36): 30779-30785 被引量:102
标识
DOI:10.1021/acsami.7b09839
摘要

We developed a method of chemically welding silver nanowires (AgNWs) using an aqueous solution containing sodium halide salts (NaF, NaCl, NaBr, or NaI). The halide welding was performed simply by immersing the as-coated AgNW film into the sodium halide solution, and the resulting material was compared with those obtained using two typical thermal and plasmonic welding techniques. The halide welding dramatically reduced the sheet resistance of the AgNW electrode because of the strong fusion among nanowires at each junction while preserving the optical transmittance. The dramatic decrease in the sheet resistance was attributed to the autocatalytic addition of dissolved silver ions to the nanowire junction. Unlike thermal and plasmonic welding methods, the halide welding could be applied to AgNW films with a variety of deposition densities because the halide ions uniformly contacted the surface or junction regions. The optimized AgNW electrodes exhibited a sheet resistance of 9.3 Ω/sq at an optical transmittance of 92%. The halide welding significantly enhanced the mechanical flexibility of the electrode compared with the as-coated AgNWs. The halide-welded AgNWs were successfully used as source-drain electrodes in a transparent and flexible organic field-effect transistor (OFET). This simple, low-cost, and low-power consumption halide welding technique provides an innovative approach to preparing transparent electrodes for use in next-generation flexible optoelectronic devices.
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