拉普拉斯变换
特征向量
半导体
流离失所(心理学)
光热治疗
对偶(语法数字)
相(物质)
热的
材料科学
拉普拉斯逆变换
统计物理学
物理
数学分析
数学
量子力学
光学
热力学
文学类
艺术
心理学
心理治疗师
作者
Ibrahim A. Abbas,Faris Alzahrani,A. M. Ełaiw
标识
DOI:10.1080/17455030.2018.1433901
摘要
The generalized model for plasma, thermal, and elastic waves under dual phase lag model have been applied to determine the carrier density, the displacement, the temperature, and the stresses in a semiconductor medium. Using Laplace transform and the eigenvalue approach methodology, the solutions of all variables have been obtained analytically. A semiconducting material like as silicon was considered. The results were graphically represented to show the different between the dual phase model, Lord and Shulman’s theory and the classical dynamical coupled theory.
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