光电探测器
光电流
材料科学
光电子学
暗电流
响应度
弯曲
光电二极管
噪声等效功率
白云母
光学
物理
复合材料
石英
作者
Bhera Ram Tak,Vinay Gupta,A. K. Kapoor,Ying‐Hao Chu,Rajendra Singh
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2019-10-28
卷期号:1 (11): 2463-2470
被引量:58
标识
DOI:10.1021/acsaelm.9b00603
摘要
Wearable gallium oxide solar-blind photodetector fabricated on muscovite mica is reported for room-temperature as well as high-temperature operations. The ultrahigh photoresponsivity of 9.7 A/W is obtained for 5 V applied bias at room temperature under 75 μW/cm2 weak illumination of 270 nm wavelength. The detector enables very low noise equivalent power (NEP) of 9 × 10–13 W/Hz1/2 and ultrahigh detectivity of 2 × 1012 jones which shows the magnificent detection sensitivity. Further, bending tests are performed for robust utilization of flexible detectors up to 500 bending cycles with each bending radius of 5 mm. After 500 bending cycles, the device shows a slight photocurrent decrease. The bending performances exhibit excellent potential for wearable applications. Moreover, photocurrent and dark current characteristics above room temperature demonstrate the outstanding functionalities until 523 K temperature, which is remarkable for flexible photodetectors. The obtained results show the potential of gallium oxide solar-blind photodetectors at room-temperature and high-temperature environments, paving the way for futuristic smart and flexible sensors.
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