循环器
单片微波集成电路
小型化
插入损耗
材料科学
光电子学
电气工程
无线电频率
集成电路
薄脆饼
极高频率
电子工程
CMOS芯片
工程类
电信
放大器
作者
Yongjie Cui,Hung‐Yu Chen,Shuoqi Chen,Douglas Linkhart,Haosen Tan,Jiangbin Wu,Soack Dae Yoon,Michael Geiler,Anton Geiler,Edward Beam,Andy Xie,Nan Wang,Michael Regan,Mark Kruzich,Bruce Nguyen,Donald White,A. Ketterson,Cathy Lee,David A. Willis,Han Wang
标识
DOI:10.1109/iedm19574.2021.9720611
摘要
Monolithically on-chip integrated circulator devices are demonstrated for the first time through the direct integration of polycrystalline hexaferrite magnetic material with GaN/SiC wafers. These narrow-band and broad-band self-biased (SB) circulators have an operating frequency centered at Ka-band (26.5-40 GHz) and V-band (40–75 GHz). A record SB circulator performance combining insertion loss well below 1 dB, isolation above 15 dB over a 10% fractional bandwidth and natural thermal solution on SiC substrate was achieved. Power measurements show the device is capable of handling an input power above 6 W. A full-duplex transmit/receive (T/R) MMIC, the first of its kind that is fully integrated on a semiconductor wafer, has also been demonstrated as enabled by this monolithically integrated circulator technology, showing over 100 times in size miniaturization as compared to conventional technology with promising applications in radio frequency (RF) electronics technologies for 5G and beyond.
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