CMOS芯片
电压基准
电压
缓冲放大器
转换器
电子工程
校准
功率(物理)
计算机科学
电气工程
控制理论(社会学)
工程类
物理
放大器
人工智能
量子力学
控制(管理)
作者
Bingbing Ma,Longbo Fan,Wei Li,Hongtao Xu
标识
DOI:10.1109/asicon52560.2021.9620438
摘要
This paper presents the design of an ultralow-outputresistance reference voltage buffer (RVB) that provides differential reference voltages (VREFP and VREFN) for high-speed high-resolution successive-approximationregister analog-to-digital converters (SAR ADCs). The proposed RVB innovatively combined the advantages of both the flipped voltage follower (FVF) and the super source follower (SSF) by parallel arrangement and sharing current, lowering the output resistance and power consumption simultaneously. In order for the RVB to be more adaptive in terms of reference voltage error (corrected by gain error calibration algorithm), the reference voltage is readily adjustable via the parallel CMOS current source flowing from the upper to the lower part of the RVB. Implemented in 40nm CMOS technology, the proposed RVB achieved an output resistance of 6.2~19.6Ohm with a current of only 2~13mA, which is the lowest among other architectures both theoretically and practically.
科研通智能强力驱动
Strongly Powered by AbleSci AI