材料科学
薄膜
脉冲激光沉积
兴奋剂
X射线光电子能谱
钨
分析化学(期刊)
透射率
锡
纳米技术
光电子学
化学工程
冶金
色谱法
工程类
化学
作者
Hur Mg,Takashi Masaki,Dae Ho Yoon
标识
DOI:10.1166/jnn.2014.10054
摘要
Tin (Sn) and tungsten (W) co-doped vanadium dioxide (VO2) nanostructured thin films with 50-nm thickness were deposited by pulsed laser deposition (PLD) to reduce the transition temperature and improve the IR transmittance. The crystal structure of the nanostructured thin films and the presence of elements were evaluated by XRD and XPS analysis. The transition temperature (T(c)) of 1 at% Sn-1 at% W co-doped VO2 nanostructured thin film was decreased to about 22 degrees C (from 70.3 to 48.5 degrees C) compared with the undoped VO2 nanostructured thin film. The transmittance width in the IR range of the co-doped nanostructured thin film decreased from 37.5% to 27% compared with the undoped VO2 nanostructured thin film. Also, the width of hysteresis was narrowed by Sn doping.
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