钝化
硅
紫外线
太阳能电池
材料科学
单晶硅
扩散
光电子学
氧化物
紫外线
热稳定性
热的
化学
纳米技术
物理
热力学
图层(电子)
有机化学
冶金
作者
P. E. Gruenbaum,Ronald A. Sinton,R.M. Swanson
标识
DOI:10.1109/pvsc.1988.105736
摘要
Single-crystal silicon point-contact solar cells show a degradation in their efficiency after being exposed to concentrated sunlight. Two mechanisms appear to be responsible: an increase in surface recombination velocity caused by ultraviolet light, possibly due to electron injection from the silicon into the oxide, and a gradual lowering of the effective carrier lifetime that occurs when the cell is under high-level injection for an extended period of time. Point-contact solar cells whose front-side passivation has a phosphorus as well as a thermal oxide diffusion are dramatically more resistant to ultraviolet radiation damage. Modeling results indicate that it is possible to make a point-contact solar cell that is 26.8% efficient after massive ultraviolet exposure.< >
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