材料科学
光电子学
泄漏(经济)
发光二极管
金属有机气相外延
二极管
化学气相沉积
蚀刻(微加工)
外延
干法蚀刻
制作
纳米技术
图层(电子)
经济
病理
替代医学
宏观经济学
医学
作者
Volkan Esendag,J. Bai,Peter Fletcher,Feng Peng,Chenqi Zhu,Yuefei Cai,Tao Wang
标识
DOI:10.1002/pssa.202100474
摘要
A systematic study has been conducted on a series of InGaN‐based micro‐light‐emitting diode (μLED) array samples which are achieved using the direct epitaxy overgrown approach on patterned templates by metalorganic chemical vapor deposition technique, where the diameters of the μLEDs are 40, 5, and 3.6 μm, respectively. The selective epitaxy approach allows to circumvent the major limitations of conventional fabrication methods of μLEDs which unavoidably introduce dry‐etching‐induced damages. Electrical characterizations are performed on the selective epitaxy overgrown μLEDs as well as conventional μLEDs fabricated using a standard dry‐etching method. For the overgrown μLEDs, the leakage current per μLED is smaller than those of the conventionally mesa‐etched μLEDs. It is worth highlighting that the single 3.6 μm μLED exhibits as low as a leakage current of 14.1 nA at a bias of −5 V. Moreover, in terms of leakage current density, the overgrown μLEDs exhibit much smaller and more consistent leakage than their mesa‐etched counterparts. Operational voltage RC constants also show more favorable to the overgrown devices than the conventionally mesa‐etched μLEDs.
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