SIMS Analysis of Ultra-Shallow Boron Implant

Secondary Ion Mass Spectrometry is a well-known technique that is widely used for characterization of implant profile in semiconductor industry. Due to the continuous transistor scaling, the junction depth has reduced to less than 5nm and the characterization of the implant profile becomes ever challenging due to the SIMS transient region effect. In this paper, SIMS analysis of the shallow boron implant showed different observation from the conventional way that the effect of primary ion energy to the surface transient effect.