Transient Simulation of Dopant Segregation at Facets During Growth of Nd:YAG Crystal

Abstract Numerical simulation of faceting and dopant segregation for vertical Bridgman growth of Nd:YAG is presented. The numerical scheme for the interface tracking considers the coupling between kinetic model and thermal transport. Dopant distributes inhomogeneously at the radial direction of the crystal/melt interface and piles up in front of the interface near the crucible. The dopant concentration of faceted portions of the crystal/melt interface is higher than that of unfaceted surface. Effect of natural convection on dopant segregation at facets is studied. The dopant boundary layer thickness decreases with the enhancement of the natural convection. The scaling analysis of the dopant boundary layer thickness for facet surface is obtained.