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JRZ
Lv1
20 积分
2024-08-31 加入
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Influence of vacancies on GaN/AlN interface characteristics
3天前
已完结
Optical properties of the nitrogen vacancy in AlN epilayers
3天前
已完结
Elimination of spiral hillocks in AlGaN grown on high-temperature annealed AlN templates by adopting an AlN/AlGaN stress modulation multilayer
16天前
已完结
Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates
27天前
已完结
The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution
1个月前
已完结
A 271.8 nm deep-ultraviolet laser diode for room temperature operation
1个月前
已完结
High brightness MOCVD-grown laser diodes using RPCVD tunnel junctions
1个月前
已完结
Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping
1个月前
已完结
Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length
1个月前
已完结
A 271.8 nm deep-ultraviolet laser diode for room temperature operation
1个月前
已完结
没有进行任何应助
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