Al Reaction-Induced Conductive a-InGaZnO as Pixel Electrode for Active-Matrix Quantum-Dot LED Displays

Thin-film transistors (TFTs) based on amorphous Indium-Gallium-Zinc Oxide (a-IGZO) can be used to drive the quantum-dot light-emitting diodes (QLEDs) for active-matrix (AM) displays. To reduce the fabrication complexity, Al reaction-induced conductive a-IGZO is developed as a common electrode, which simultaneously serves as a drain electrode for the TFT and as a bottom electrode for the QLED. The obtained a-IGZO electrode exhibits a low sheet resistance of 120 $\Omega $ / and a high transmittance of 92.1% at a thickness of 100 nm. With the proposed a-IGZO electrode, QLED demonstrates a high external quantum efficiency of 26%. Moreover, because both TFT and QLED share the same a-IGZO electrode, at least two patterning processes can be reduced in making a AM display. Our results suggest that Al reaction-induced conductive a-IGZO could be a promising pixel electrode for AMQLED displays.