兴奋剂
带隙
材料科学
吸收边
吸收(声学)
电子能带结构
半导体
导带
电子结构
吸收光谱法
格子(音乐)
分析化学(期刊)
凝聚态物理
光电子学
化学
光学
物理
量子力学
电子
复合材料
色谱法
声学
出处
期刊:Journal of Semiconductors
[IOP Publishing]
日期:2016-04-01
卷期号:37 (4): 042002-042002
被引量:8
标识
DOI:10.1088/1674-4926/37/4/042002
摘要
The effects of F-doping concentration on geometric structure, electronic structure and optical property of β-Ga2O3 were investigated. All F-doped β-Ga2O3 with different concentrations are easy to be formed under Ga-rich conditions, the stability and lattice parameters increase with the F-doping concentration. F-doped β-Ga2O3 materials display characteristics of the n-type semiconductor, occupied states contributed from Ga 4s, Ga 4p and O 2p states in the conduction band increase with an increase in F-doping concentration. The increase of F concentration leads to the narrowing of the band gap and the broadening of the occupied states. F-doped β-Ga2O3 exhibits the sharp band edge absorption and a broad absorption band. Absorption edges are blue-shifted, and the intensity of broad band absorption has been enhanced with respect to the fluorine content. The broad band absorption is ascribed to the intra-band transitions from occupied states to empty states in the conduction band.
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