记忆电阻器
材料科学
异质结
光电子学
非易失性存储器
纳米技术
电阻随机存取存储器
肖特基势垒
电子工程
二极管
电压
电气工程
工程类
作者
Jiangqiu Wang,Bai Sun,Guangdong Zhou,Shouhui Zhu,Chuan Yang,Chuan Ke,Yong Zhao,Hongyan Wang
标识
DOI:10.1016/j.jallcom.2023.168761
摘要
Memristors with a two-terminal structure are considered to be one of the most promising electronic devices capable of overcoming the Von Neumann bottleneck, which is highly anticipated in the post-Moore era and next-generation artificial intelligence applications. In this work, a memristive device was fabricated using a WOx/BiFeOy heterojunction as functional layer on F-doped SnO2 (FTO) substrate by magnetron sputtering. The Ag/WOx/BiFeOy/FTO device exhibits enhanced bipolar nonvolatile resistive switching (RS) memory behavior compared with single-layer BiFeOy-based memristors, which can meet the requirements of high-density information storage. By performing a comprehensive conductivity analysis on the current-voltage (I-V) curve, it was proposed a reasonable physical model to explain the RS memory behavior of the device based on space-charge-limited current (SCLC) mechanism and the Schottky emission. Therefore, this work indicates that the bilayer WOx/BiFeOy heterojunction as functional layer can effectively improve the performance of memristive devices, which will further expand the application of ferroelectric/metal oxide heterojunction in the field of memristors.
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