钝化
材料科学
水溶液
对偶(语法数字)
过程(计算)
化学工程
纳米技术
化学
计算机科学
物理化学
图层(电子)
操作系统
文学类
工程类
艺术
作者
Temujin Enkhbat,Enkhjargal Enkhbayar,Namuundari Otgontamir,Md Hamim Sharif,Md Salahuddin Mina,Seong Yeon Kim,JunHo Kim
标识
DOI:10.1016/j.jechem.2022.10.004
摘要
Ag substitution in Cu2ZnSn(S,Se)4 (CZTSSe) is a promising way to mitigate Cu/Zn related defects, electrostatic fluctuations and Shockley-Read-Hall (SRH) recombination centers. However, high performance ACZTSSe solar cells are generally demonstrated with more Ag amounts and strenuous fabrication processes, which are not ideal when using cheap constituent materials CZTSSe. To reduce the Ag amount (2%–3%), local Ag substitutions into CZTSSe at front (F), back (B) and dual front/back (FB) were proposed. Experimental results revealed that F-passivation effectively reduced the Cu/Zn related defects and further limits the interface/bulk recombination whereas B-passivation improved the grain growth at the back interface and further allows enhanced transport of charge carriers. By employing the dual Ag-passivation approach, the final ACZTSSe device parameters were significantly improved and remarkable power conversion efficiency (PCE) of 12.43% was achieved with eco-friendly aqueous solution process.
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