神经形态工程学
记忆电阻器
材料科学
铁电性
光电子学
电阻式触摸屏
电阻随机存取存储器
异质结
极化(电化学)
非易失性存储器
电气工程
电压
电子工程
计算机科学
化学
工程类
电介质
物理化学
机器学习
人工神经网络
作者
Mingrui Liu,Shunpeng Lu,Yuping Jia,Hang Zang,Ke Jiang,Xiaojuan Sun,Dabing Li
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2024-02-27
卷期号:45 (3): 356-359
被引量:2
标识
DOI:10.1109/led.2023.3347233
摘要
AlScN-based memristors show high potential of non-volatile storage and neuromorphic computing. Here, we report an AlScN/n-GaN heterostructure memristor with a large ON/OFF ratio over $10^{{5}}$ attributed to the coexistence of heterointerface energy band modulation and trap-assisted conduction mechanisms. Unlike typical ferroelectric memristors, the device presents obvious reproducible bipolar resistive switching characteristics without polarization flipping due to the extra trap-assisted conductive path, which effectively reduces energy consumption. Remarkably, multi-level ON/OFF ratios and reversible bipolar resistive switching characteristics can be achieved by regulating the magnitude and direction of ferroelectric polarization, indicating that different operating modes can be achieved on a single device, which shows promise for improving device integration density and information security. These findings help elucidate the resistive switching mechanism and the effect of ferroelectric polarization on device properties, which pave the way for applications of power-efficient CMOS-compatible nitride memristors.
科研通智能强力驱动
Strongly Powered by AbleSci AI