记忆电阻器
吸引子
控制理论(社会学)
双稳态
磁滞
振荡(细胞信号)
电容器
状态变量
非线性系统
瞬态(计算机编程)
拓扑(电路)
物理
数学
电压
数学分析
计算机科学
凝聚态物理
光电子学
量子力学
控制(管理)
人工智能
组合数学
生物
遗传学
操作系统
热力学
作者
Haodong Li,Chunlai Li,Shaobo He
标识
DOI:10.1142/s0218127423500323
摘要
This paper designs a locally active memristor with two variable parameters based on Chua’s unfolding theorem. The dynamical behavior of the memristor is analyzed by employing pinched hysteresis loop, power-off plot (POP), DC V–I curve, small-signal analysis, and edge-of-chaos theory. It is found that the proposed memristor exhibits nonvolatile and bistable behaviors because of coexisting pinched hysteresis loops. And the variable parameters can realize the rotation of the coexisting pinched hysteresis loops, regulate the range of the locally active region and even transform the shape of the DC V–I curve into S-type or N-type. Furthermore, a simple oscillation circuit is constructed by connecting this locally active memristor with an inductor, a capacitor, a resistance, and a bias voltage. It is shown by analysis that the memristive circuit can generate complex nonlinear dynamics such as multiscroll attractor, initial condition-based dynamics switching, transient phenomenon with the same dynamical state but different offsets and amplitudes, and symmetric coexisting attractors. The measurement observed from the implementation circuit further verifies the numerical results of the oscillation circuit.
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